ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 g eneral description this power mosfet is produced using the advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on - state resistance, have high rugged avalanche characteristics. these devices are well sui ted for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. features rds(on) (typ 1.3 )@vgs=10v gate charge (typical 39nc) improved dv/dt capability, high ruggedness 100% avalanche tested maximum junction temperature range (150 c) halogen free absolute maximum ratings (tc=25 c unless otherwise specified) symbol parameter value unit v dss d rain - source voltage 800 v i d drain current - continuous (t c =25 ) 8 a drain current - continuous (t c =100 ) 5.0 a i dm drain current - pulsed 32 a v gs gate - source voltage ?0 v e as single pulsed avalanche energy 850 mj e ar repetitive avalanche energy 17.8 mj d v /d t peak diode recovery dv/dt 4.5 v/ns p d power dissipation (t c =25 ) 59 w - derate above 25 0.48 w/ t j ,t stg operating and storage temperature range 55 to + 150 t l maximum lead temperature for s oldering purposes, 1/8'' from case for 5 seconds 300 drain current limited by maximum junction temperature
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 thermal resistance characteristics symbol parameter typ. max. units r jc junction - t o - case 2.1 /w r ja junction - to - ambient 62.5 electrical characteristics (tc=25 c unless otherwise specified) symbol parameter test conditions min type max units on characteristics v gs gate threshold voltage v ds =v gs ,i d =250a 3.0 -- 5.0 v r ds( on) static drain - source on - resistance v gs =10v,i d =4.0a 1.3 1.6 off characteristics bv dss drain - source breakdown voltage v gs =0 v , i d =250a 800 v bv dss / t j breakdown voltage temperature coefficient i d =250 a, referen ced to 25 0.6 v/ i dss zero gate voltage drain current v ds =800v , v gs = 0 v 10 a v ds =640v , v c = 125 100 a i gssf gate - body leakage current, forward v gs =30v , v ds =0 v 100 na i gssr gate - body leakage current, reverse v gs = - 30v , v ds =0 v 100 na dynamic characteristics c iss input capacitance v ds =25v, v gs =0v, f=1.0mhz 1700 pf c oss output capacitance 140 pf c rss reverse transfer capacitance 15 pf switc hing characteristics t d(on) turn - on time v ds =400 v, i d =8.0a, r g =25 50 -- ns t r turn - on rise time 100 -- ns t d(off) turn - off delay time 70 -- ns tf turn - off fall time 70 -- ns q g total gate charge v ds =640v,i d =8.0a, v gs =10 v 37 -- nc q gs gate - source charge 11 nc q gd gate - drain charge 15 nc
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 source - drain diode maximum ratings and characteristics i s continuous source - drain diode forward current 8.0 a i sm pulsed source - drai n diode forward current 32.0 v sd source - drain diode forward voltage i s =8a, v gs =0v 1.4 v trr reverse recovery time i s =8 a , v gs = 0v di f /dt=100a/ s 0.7 us qrr reverse recovery charge 8.0 c notes: 1. repeativity rating : pulse width limited by junction temperature 2. l = 25.0mh, ias =8.0a, vdd = 50v, rg = 25 , starting tj = 25 c 3. isd 8.0a, di/dt 200a/us, vdd bvdss, starting tj = 25 c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature.
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 characteristic curves figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 characteristic curve s figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 fig 15. peak diode recovery dv/dt test circuit & waveforms
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 packag e dimensions dimensions in millimeters
ms f 8n80 - g 800v n - channel mosfet bruckewell technology corporation rev. a - 2012 legal disclaimer notice disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its af filiates, agents, and employees, and all persons acting on its or their behalf (collectively, ?ruckewell?, disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims ( i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewell s knowledge of typical requirements that are often placed on bruckewell products in generi c applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer? responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewell s terms an d conditions of purchase, including but not limited to the warranty expressed therein.
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